? semiconductor components industries, llc, 2001 march, 2001 rev. 0 1 publication order number: ntp45n06l/d ntp45n06l, ntb45n06l power mosfet 45 amps, 60 volts, logic level nchannel to220 and d 2 pak designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. features ? higher current rating ? lower r ds(on) ? lower v ds(on) ? lower capacitances ? lower total gate charge ? tighter v sd specification ? lower diode reverse recovery time ? lower reverse recovery stored charge typical applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 60 vdc draintogate voltage (r gs = 10 m w ) v dgr 60 vdc gatetosource voltage continuous nonrepetitive (t p 10 ms) v gs v gs 15 20 vdc drain current continuous @ t a = 25 c continuous @ t a = 100 c single pulse (t p 10 m s) i d i d i dm 45 30 150 adc apk total power dissipation @ t a = 25 c derate above 25 c total power dissipation @ t a = 25 c (note 1.) total power dissipation @ t a = 25 c (note 2.) p d 125 0.83 3.2 2.4 w w/ c w w operating and storage temperature range t j , t stg 55 to +175 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 50 vdc, v gs = 5.0 vdc, l = 0.3 mh i l(pk) = 40 a, v ds = 60 vdc, r g = 25 w ) e as 240 mj 1. when surface mounted to an fr4 board using 1 pad size, (cu area 1.127 in 2 ). 2. when surface mounted to an fr4 board using the minimum recommended pad size, (cu area 0.412 in 2 ). 45 amperes 60 volts r ds(on) = 28 m w device package shipping ordering information ntp45n06l to220ab 50 units/rail to220ab case 221a style 5 1 2 3 4 http://onsemi.com nchannel d s g marking diagrams & pin assignments ntx45n06l = device code ll = location code y = year ww = work week ntp45n06l llyww 1 gate 3 source 4 drain 2 drain ntb45n06l llyww 1 gate 3 source 4 drain 2 drain 1 2 3 4 d 2 pak case 418b style 2 ntb45n06l d 2 pak 50 units/rail ntb45n06lt4 d 2 pak 800/tape & reel
ntp45n06l, ntb45n06l http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit thermal resistance junctiontocase junctiontoambient (note 3.) junctiontoambient (note 4.) r q jc r q ja r q ja 1.2 46.8 63.2 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (note 4.) (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 60 67 67.2 vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss 1.0 10 m adc gatebody leakage current (v gs = 15 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics (note 5.) gate threshold voltage (note 5.) (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 1.0 1.8 4.7 2.0 vdc mv/ c static draintosource onresistance (note 5.) (v gs = 5.0 vdc, i d = 22.5 adc) r ds(on) 23 28 mohm static draintosource onvoltage (note 5.) (v gs = 5.0 vdc, i d = 45 adc) (v gs = 5.0 vdc, i d = 22.5 adc, t j = 150 c) v ds(on) 1.03 0.93 1.51 vdc forward transconductance (note 5.) (v ds = 8.0 vdc, i d = 12 adc) g fs 22.8 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 1212 1700 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 352 480 transfer capacitance f = 1 . 0 mhz) c rss 90 180 switching characteristics (note 6.) turnon delay time t d(on) 13 30 ns rise time (v dd = 30 vdc, i d = 45 adc, t r 341 680 turnoff delay time (v dd 30 vdc , i d 45 adc , v gs = 5.0 vdc, r g = 9.1 w ) (note 5.) t d(off) 36 75 fall time t f 158 320 gate charge (v 48 vd i 45 ad q t 23 32 nc (v ds = 48 vdc, i d = 45 adc, v gs = 5.0 vdc ) ( note 5. ) q 1 4.6 v gs = 5 . 0 vdc) (note 5 . ) q 2 14.1 sourcedrain diode characteristics forward onvoltage (i s = 45 adc, v gs = 0 vdc) (note 5.) (i s = 45 adc, v gs = 0 vdc, t j = 150 c) v sd 1.01 0.92 1.15 vdc reverse recovery time (i 45 ad v 0 vd t rr 56 ns (i s = 45 adc, v gs = 0 vdc, di s /dt = 100 a/ m s ) ( note 5. ) t a 30 di s /dt = 100 a/ m s) (note 5 . ) t b 26 reverse recovery stored charge q rr 0.09 m c 3. when surface mounted to an fr4 board using 1 pad size, (cu area 1.127 in 2 ). 4. when surface mounted to an fr4 board using the minimum recommended pad size, (cu area 0.412 in 2 ). 5. pulse test: pulse width 300 m s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
ntp45n06l, ntb45n06l http://onsemi.com 3 2 1.8 1.4 1.6 1.2 1 0.6 100 10 1000 10000 0 50 4 20 2 1 v ds , draintosource voltage (volts) i d , drain current (amps) 0 v gs , gatetosource voltage (volts) figure 1. onregion characteristics figure 2. transfer characteristics i d , drain current (amps) 0 0.038 0.034 0.03 40 30 20 0.026 0.022 0.018 0.014 10 50 80 figure 3. onresistance vs. gatetosource voltage i d , drain current (amps) figure 4. onresistance vs. drain current and gate voltage i d , drain current (amps) r ds(on) , draintosource resistance ( w ) r ds(on) , draintosource resistance ( w ) figure 5. onresistance variation with temperature t j , junction temperature ( c) figure 6. draintosource leakage current vs. voltage v ds , draintosource voltage (volts) r ds(on) , draintosource resistance (normalized) i dss , leakage (na) 80 50 50 25 0 25 75 125 100 1.8 5 4.2 3.4 2.6 5. 8 03040 20 50 10 80 04050 30 20 60 10 3 10 30 40 v gs = 8 v v gs = 7 v v gs = 6 v v gs = 5.5 v v gs = 5 v v gs = 4 v v gs = 3.5 v v ds > = 10 v t j = 25 c t j = 55 c t j = 100 c v gs = 10 v v gs = 5 v v gs = 5 v 150 175 v gs = 0 v i d = 22.5 a v gs = 5 v 60 70 50 20 0 80 10 30 40 60 70 0.042 0.046 0.038 0.034 0.03 0.026 0.022 0.018 0.042 0.046 60 70 0.8 v gs = 4.5 v v gs = 9 v v gs = 10 v t j = 25 c t j = 55 c t j = 100 c 60 70 t j = 150 c t j = 100 c t j = 125 c
ntp45n06l, ntb45n06l http://onsemi.com 4 0 i d = 45 a t j = 25 c v gs q 2 q 1 q t v gs 1000 100 10 1 0.1 1000 100 10 6 5 4 3 2 1 0 280 200 80 40 0 48 40 32 24 0 10 3600 2800 10 2400 2000 15 520 gatetosource or draintosource voltage (volts) c, capacitance (pf) 1600 1200 800 400 0 5 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gatetosource and draintosource voltage vs. total charge v gs , gatetosource voltage (volts) figure 9. resistive switching time variation vs. gate resistance r g , gate resistance ( w ) figure 10. diode forward voltage vs. current v sd , sourcetodrain voltage (volts) i s , source current (amps) t, time (ns) figure 11. maximum rated forward biased safe operating area v ds , draintosource voltage (volts) figure 12. maximum avalanche energy vs. starting junction temperature t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse draintosource avalanche energy (mj) 25 0 16 20 12 8 424 1 10 100 0.6 0.76 0.88 0.72 0.68 0.92 0.64 1 0.10 10 100 1 25 125 150 100 75 175 50 v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss 16 8 0.8 0.84 c iss v gs = 15 v single pulse t c = 25 c v ds = 30 v i d = 45 a v gs = 5 v v gs = 0 v t j = 25 c i d = 45 a 10 ms 1 ms 100 m s dc t r t d(off) t d(on) t f v ds 3200 0.96 120 160 240 r ds(on) limit thermal limit package limit 4000
ntp45n06l, ntb45n06l http://onsemi.com 5 0.00001 1 0.1 0.01 0.001 0.0001 10 1 0.1 0.01 r(t), effective transient thermal response (normalized) t, time (s) figure 13. thermal response normalized to r q jc at steady state 10 0.01 0.001 figure 14. thermal response t, time (s) r(t), effective transient thermal resistance (normalized) 0.00001 0.001 0.01 1 0.1 1000 100 10 1 0.1 0.0001 normalized to r q ja at steady state, 1 square cu pad, cu area 1.127 in 2 , 3 x 3 inch fr4 board
ntp45n06l, ntb45n06l http://onsemi.com 6 package dimensions to220 threelead to220ab case 221a09 issue aa style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
ntp45n06l, ntb45n06l http://onsemi.com 7 package dimensions d 2 pak case 418b03 issue d style 2: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
ntp45n06l, ntb45n06l http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntp45n06l/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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